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Quantification of the In‐distribution in embedded InGaAs quantum dots by transmission electron microscopy
Author(s) -
Blank H.,
Litvinov D.,
Schneider R.,
Gerthsen D.,
Passow T.,
Scheerschmidt K.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900513
Subject(s) - quantum dot , transmission electron microscopy , quantum point contact , lattice (music) , condensed matter physics , materials science , quantum , electron , optoelectronics , physics , nanotechnology , quantum well , quantum mechanics , laser , acoustics
The In‐concentration in InGaAs quantum dots located within a GaAs matrix was determined with the composition evaluation by lattice fringe analysis (CELFA) technique. However, the results obtained with this method cannot account for the three‐dimensional shape of quantum dots and their embedding in GaAs. A correction procedure was developed that takes into consideration the shape of the quantum dots and the TEM sample thickness and quantum‐dot size. After correction, In‐concentration profiles show an increasing In‐content towards the top of the quantum dots which is consistent with the effect of In‐segregation and earlier studies using other experimental techniques. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)