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Shallow trapping center parameters in as‐grown AgIn 5 S 8 crystals determined by thermally stimulated current measurements
Author(s) -
Yildirim T.,
Gasanly N. M.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900495
Subject(s) - trapping , chemistry , center (category theory) , current (fluid) , analytical chemistry (journal) , trap (plumbing) , activation energy , crystallography , atomic physics , thermodynamics , physics , ecology , chromatography , biology , meteorology
Thermally stimulated current measurements were carried out on as‐grown AgIn 5 S 8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks –1 . The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 × 10 –25 cm 2 for capture cross section and 6.1 × 10 12 cm –3 for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)