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Oxide layer dissolution in Si/SiO x /Si wafer bonded structures
Author(s) -
Zakharov N.,
Pippel E.,
Werner P.,
Vdovin V.,
Gösele U.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900467
Subject(s) - dissolution , oxide , wafer , annealing (glass) , materials science , crystallography , layer (electronics) , epitaxy , wafer bonding , silicon , chemical engineering , chemistry , composite material , nanotechnology , optoelectronics , metallurgy , engineering
The evolution of the interfaces of hydrophilic‐bonded Si wafers and the corresponding low‐angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are seperated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si(Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si(Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)