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Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method
Author(s) -
Kumar N.,
Sharma V.,
Padha N.,
Shah N. M.,
Desai M. S.,
Panchal C. J.,
Protsenko I. Yu.
Publication year - 2010
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900424
Subject(s) - thin film , analytical chemistry (journal) , band gap , materials science , atmospheric temperature range , crystallite , substrate (aquarium) , electrical resistivity and conductivity , evaporation , diffraction , tin , scanning electron microscope , activation energy , chemistry , optics , optoelectronics , nanotechnology , composite material , metallurgy , physics , oceanography , engineering , chromatography , geology , meteorology , electrical engineering , thermodynamics
Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350‐550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T s ) on the structural, morphological, optical, and electrical properties of the films were investigated using x‐ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall‐effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80‐330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T s . With the increase of T s the intensity of the diffraction peaks increased and well‐resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38‐1.18 eV. Hall‐effect measurements revealed the resistivity of films in the range 112‐20 Ω cm for films deposited at different T s . The activation energy for films deposited at different T s was in the range of 0.14 eV‐0.28 eV as derived from the analysis of the data of low‐temperature resistivity measurements. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)