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Synthesis and field emission properties of SnO 2 nanowalls
Author(s) -
Li L. J.,
Yu K.,
Wang Y.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900342
Subject(s) - field electron emission , photoluminescence , microstructure , substrate (aquarium) , materials science , silicon , scanning electron microscope , analytical chemistry (journal) , diffraction , nanotechnology , optoelectronics , chemistry , electron , optics , metallurgy , composite material , physics , oceanography , chromatography , quantum mechanics , geology
SnO 2 nanowalls were synthesized on silicon substrate by the thermal chemical vapor transport method at a low temperature of around 650 °C under atmospheric pressure. The microstructure and morphology of the SnO 2 nanowalls were evaluated by using scanning electron microscopies and X‐ray diffraction. Room temperature photoluminescence spectra of the nanowalls showed a broad emission band centering at about 530 nm. Field emission measurements demonstrated that the nanowalls possessed good performance with a turn‐on field of ∼3.5 V/μm and a threshold field of ∼6.1 V/μm. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)