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Properties of InAs co‐doped ZnO thin films prepared by pulsed laser deposition
Author(s) -
Elanchezhiyan J.,
Shin B. C.,
Lee W. J.,
Park S. H.,
Kim S. C.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900319
Subject(s) - sapphire , pulsed laser deposition , materials science , doping , hall effect , thin film , scanning electron microscope , field emission microscopy , analytical chemistry (journal) , surface roughness , deposition (geology) , atomic force microscopy , diffraction , electrical resistivity and conductivity , laser , nanotechnology , optoelectronics , chemistry , optics , composite material , paleontology , physics , electrical engineering , engineering , chromatography , sediment , biology
InAs co‐doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X‐ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to investigate the structural, electrical, morphological and elemental properties of the films respectively. XRD analysis showed that all the films were highly orientated along the c‐axis. It was observed from Hall effect measurements that InAs co‐doped ZnO films were of n‐type conductivity. In addition, the presence of In and As has been confirmed by Energy dispersive X‐ray analysis. AFM images revealed that the surface roughness of the films was decreased upon the co‐doping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)