Premium
Defect structure characteristics in near‐stoichiometric In:LiNbO 3 single crystals grown by K 2 O‐flux method
Author(s) -
Fang Shuangquan,
Han Zhaoxiang,
Qiao Yingjie,
Liu Yingying,
Jia Qi
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900307
Subject(s) - stoichiometry , flux (metallurgy) , indium , diffraction , analytical chemistry (journal) , differential thermal analysis , absorption (acoustics) , infrared , absorption spectroscopy , chemistry , ultraviolet , infrared spectroscopy , powder diffraction , thermal analysis , ion , crystallography , flux method , materials science , single crystal , thermal , optics , optoelectronics , physics , organic chemistry , chromatography , meteorology , composite material
With K 2 O as flux, near‐stoichiometric In:LiNbO 3 (In:SLN) crystals with different indium contents were grown by the top seed solution growth (TSSG) method. Defect structure characteristics and the replacement principle of extrinsic ions were derived from X‐ray powder diffraction, differential thermal analysis (DTA), ultraviolet‐visible (UV) absorption and infrared (IR) spectrum measurement. Further analysis indicated that the threshold concentration of In 2 O 3 in near‐stoichiometric LiNbO 3 crystals were about 1.1 mol%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)