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A new piezoelectric single crystal obtained by Ge doping in the SiO 2 structure
Author(s) -
Miclau M.,
Miclau N.,
Poienar M.,
Grozescu I.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200900032
Subject(s) - quartz , hydrothermal circulation , electron microprobe , materials science , piezoelectricity , microprobe , crystal (programming language) , single crystal , crystallography , analytical chemistry (journal) , diffraction , scanning electron microscope , hydrothermal synthesis , crystal growth , mineralogy , rod , chemical engineering , chemistry , composite material , metallurgy , optics , medicine , physics , alternative medicine , chromatography , pathology , computer science , engineering , programming language
The interest of Si 1–x Ge x O 2 single crystals with alpha‐quartz structure is connected to improvement of electromechanical coefficients and rise of α – β phase transition of quartz one. Growth of an α‐Si x Ge 1–x O 2 crystal was realized by a hydrothermal method of temperature gradient in autoclaves, made from Cr–Ni alloys. Nutrient material was prepared from synthetic quartz as crashed rods and placed in the bottom of autoclaves. There was loaded GeO 2 powder additive in proportions to quartz nutrient. Single crystals were investigated by electron microprobe analysis, X‐ray diffraction and atomic force microscopy. The most important result, which was obtained during the investigations, is an experimental proof of growth of α‐Si x Ge 1–x O 2 single crystals under the hydrothermal conditions. The present results thus open the possibility to tune the piezoelectric properties of these materials by varying the chemical composition. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)