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Raman scattering study on Ga 1– x Mn x As prepared by Mn ions implantation, deposition and post‐annealing
Author(s) -
Islam M. R.,
Chen N. F.,
Yamada M.
Publication year - 2009
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800215
Subject(s) - raman scattering , phonon , raman spectroscopy , annealing (glass) , ion , analytical chemistry (journal) , scattering , materials science , ion implantation , chemistry , condensed matter physics , optics , physics , metallurgy , organic chemistry , chromatography
Raman scattering measurements have been performed in Ga 1– x Mn x As crystals prepared by Mn ions implantation, deposition, and post‐annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs‐like phonon modes, where the GaAs‐like LO and TO phonons are found to be shifted by approximately 4 and 2 cm ‐1 , respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn 3 O 4 like. The coupled LO‐phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post‐annealing are also observed. The compositional dependence of GaAs‐like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LO GaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LO GaAs phonon mode, the hole density is evaluated to be 1.84×10 18 cm ‐3 . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)