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Raman scattering characterization of Mn composition and strain in Ga 1– x Mn x Sb/GaSb epitaxial layers
Author(s) -
Islam M. R.,
Chen N. F.,
Yamada M.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800144
Subject(s) - raman spectroscopy , epitaxy , raman scattering , phonon , analytical chemistry (journal) , materials science , strain (injury) , substrate (aquarium) , scattering , manganese , characterization (materials science) , solid solution , crystallography , condensed matter physics , chemistry , optics , nanotechnology , physics , metallurgy , medicine , oceanography , layer (electronics) , chromatography , geology
Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga 1– x Mn x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga 1– x Mn x Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga 1– x Mn x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)