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Growth and characterization of Ytterbium doped KGd(WO 4 ) 2 single crystal
Author(s) -
Samuel P.,
Moorthy Babu S.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800114
Subject(s) - ytterbium , raman spectroscopy , materials science , lasing threshold , doping , laser , raman scattering , ion , absorption spectroscopy , diode , crystal (programming language) , analytical chemistry (journal) , optoelectronics , optics , chemistry , wavelength , physics , organic chemistry , chromatography , computer science , programming language
Single crystals of Ytterbium doped KGd(WO 4 ) 2 were grown by Top Seeded Solution Growth technique using K 2 WO 4 as flux system. The growth parameters were optimised to get optically transparent crystals. Variation in the lattice parameters were observed in comparison to the pure KGd(WO 4 ) 2 crystals. The absorption spectra recorded for the Yb:KGW confirms the material suitability for diode pumped solid state lasers. The vibrational studies carried out using spontaneous Raman spectra indicate the strong anionic vibration of the material. PL spectra show the lasing channel of the laser active ions present. Stimulated Raman scattering analysis confirms the material as an efficient Raman laser material. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)