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Surface preparation of AlN substrates
Author(s) -
Chen X. F.,
Siche D.,
Albrecht M.,
Hartmann C.,
Wollweber J.,
Xu X. G.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800057
Subject(s) - polishing , cathodoluminescence , chemical mechanical planarization , materials science , wafer , epitaxy , misorientation , surface roughness , surface finish , composite material , nanotechnology , microstructure , optoelectronics , layer (electronics) , grain boundary , luminescence
The Al‐polar surfaces of AlN wafers cut from physical vapor transport grown crystals were lapped and polished. Polishing procedures were developed to produce surfaces for epitaxial growth. The surface scratches and subsurface damage caused by mechanical polishing were removed by a final chemical mechanical polishing (CMP) process, which yielded a perfect surface ready for epitaxial growth. After CMP the average root mean square surface roughness on a 5 µm × 5 µm area was 0.1 nm. Characterization of the polished surfaces by electron back scatter diffraction and cathodoluminescence showed no subsurface damage. The difference of orientation dependent material removal rate during CMP went up with the increase of the misorientation from (0001) surface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)