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Stoichiometric single crystal growth of AgGaS 2 by iodine transport method and characterization
Author(s) -
Prabukanthan P.,
Dhanasekaran R.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800055
Subject(s) - full width at half maximum , photoluminescence , tetragonal crystal system , single crystal , ternary operation , chalcopyrite , crystal (programming language) , analytical chemistry (journal) , materials science , stoichiometry , band gap , crystal growth , crystallography , electrical resistivity and conductivity , chemistry , crystal structure , optoelectronics , physics , copper , chromatography , quantum mechanics , computer science , programming language , metallurgy
High quality single crystals of ternary AgGaS 2 (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)