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Temperature dependence of growth orientation and surface morphology of Li‐doped ZnO thin films on SiO 2 /Si substrates
Author(s) -
ElMaghraby E. M.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200800007
Subject(s) - x ray photoelectron spectroscopy , materials science , scanning electron microscope , thin film , morphology (biology) , doping , sputtering , diffraction , deposition (geology) , analytical chemistry (journal) , reflection (computer programming) , optics , optoelectronics , nanotechnology , chemistry , chemical engineering , composite material , paleontology , physics , sediment , chromatography , biology , computer science , engineering , genetics , programming language
Abstract ZnO thin films doped with Li (ZnO:Li) were deposited onto SiO 2 /Si (100) substrates by direct‐current sputtering technique in the temperature range from room temperature to 500 °C. The crystalline structure, surface morphology and composition, and optical reflectivity of the deposited films were studied by X‐ray diffraction (XRD), Scanning Electron Microscopy (SEM), X‐ray Photoelectron Spectroscopy (XPS) and optical reflection measurements. Rough surface p‐type ZnO thin film deposition was confirmed. The results indicated that the ZnO:Li films growed at low temperatures show c‐axis orientation, while a‐axis growth direction is preferable at high temperatures. Moreover, the optical reflectivity from the surface of the films matched very well with the obtained results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)