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Structural, compositional and optical properties of gallium selenide thin films doped with cadmium
Author(s) -
Qasrawi A. F.,
Saleh A. A.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711107
Subject(s) - cadmium selenide , band gap , gallium , thin film , attenuation coefficient , refractive index , doping , analytical chemistry (journal) , materials science , dielectric , crystallite , absorption (acoustics) , direct and indirect band gaps , dispersion (optics) , optics , chemistry , optoelectronics , nanotechnology , metallurgy , physics , chromatography , quantum dot , composite material
Polycrystalline cadmium doped gallium selenide thin films were obtained by the thermal co‐evaporation of GaSe crystals and Cd grains onto glass substrates. The structural, compositional and optical properties of these films have been investigated by means of X‐ray diffraction, energy dispersive X‐ray analysis and UV‐visible spectroscopy techniques, respectively. Particularly, the elemental analysis, the crystalline nature, the energy band gap, the refractive index, the dispersion energy and static dielectric constant have been identified. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct forbidden energy band gap of 1.22 eV. The cadmium doping has caused a significant decrease in the values of the energy band gap and in all the dispersive optical parameters, as well. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)