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Crystal growth of zirconium‐doped KTiOPO 4 crystals in the K 2 O‐P 2 O 5 ‐TiO 2 ‐ZrF 4 system
Author(s) -
Ivanenko V. I.,
Zatovsky I. V.,
Slobodyanik N. S.,
Nagornyi P. G.,
Baumer V. N.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711097
Subject(s) - zirconium , dopant , doping , materials science , crystal (programming language) , analytical chemistry (journal) , crystal structure , crystallography , mineralogy , chemistry , metallurgy , optoelectronics , chromatography , computer science , programming language
Zirconium‐doped KTiOPO 4 (KTP) crystals were grown using a high temperature flux method in the K 2 O‐P 2 O 5 ‐TiO 2 ‐ZrF 4 system. The dopant content in the single crystals with general composition KTi 1‐x Zr x OPO 4 (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO 4 containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF 4 precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)