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Dislocation and microindentation analysis of vapour grown Bi 2 Te 3‐x Se x whiskers
Author(s) -
Kunjomana A. G.,
Chandrasekharan K. A.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711084
Subject(s) - whiskers , annealing (glass) , materials science , dislocation , indentation hardness , crystallography , doping , analytical chemistry (journal) , mineralogy , composite material , chemistry , microstructure , optoelectronics , chromatography
The structural defects and microhardness of Bi 2 Te 3‐x Se x whiskers (x = 0, 0.2 and 0.4 at% Se) grown by physical vapour deposition (PVD) method have been investigated. Concentric pairs of dislocation loops were observed on the as‐grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by chemical etching technique. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the prism faces of Bi 2 Te 3‐x Se x whiskers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)