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Investigation of domain structures in PZNT93/7 crystals by chemical etching
Author(s) -
Jin Min,
Xu Jiayue,
Wu Aiying,
Li Xinhua,
Shen Hui,
He Qingbo
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711080
Subject(s) - wafer , impurity , isotropic etching , antiparallel (mathematics) , crystallography , crystal (programming language) , etching (microfabrication) , materials science , polarization (electrochemistry) , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , magnetic field , computer science , programming language
The domain structures in 0.93Pb (Zn 1/3 Nb 2/3 )O 3 ‐0.07PbTiO 3 (PZNT93/7) crystals were investigated by chemical etching technique. Original antiparallel 180° domains of size 20–40 μm were observed on the surface of as‐grown PZNT93/7 crystal. It was found the domain states are sensitive to the stress field induced by mechanical processing or impurities. As the composition of PZNT93/7 crystal was located near the morphotropic phase boundary, various domain configurations were observed. On the <001>‐oriented wafer, the etched a ‐ and c ‐domains revealed homogenous and island‐like patterns. The c ‐domains consist of upper and lower height regions corresponding to the tail and head of the polarization, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)