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Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si‐C‐H‐Cl
Author(s) -
Lilov S. K.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711074
Subject(s) - silicon carbide , yield (engineering) , pyrolysis , silicon , carbon fibers , hydrogen , phase (matter) , carbide , epitaxy , thermodynamics , work (physics) , thermodynamic equilibrium , materials science , chemical engineering , chemistry , analytical chemistry (journal) , nanotechnology , metallurgy , organic chemistry , composite material , physics , layer (electronics) , composite number , engineering
In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condensed phases C, Si and SiC have been determined. The optimal conditions giving the maximum yield of silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined. The thermodynamic analysis of the examined system showed that the increasing of the content of hydrogen in the initial mixture allows to decrease the optimal temperature for obtaining of silicon carbide by the method of pyrolysis and essentially to increase its maximum possible yield. (© 2008 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)