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Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material
Author(s) -
Kallinger B.,
Meissner E.,
Berwian P.,
Hussy S.,
Friedrich J.,
Mueller G.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711052
Subject(s) - materials science , nucleation , evaporation , vapor phase , substrate (aquarium) , sapphire , phase (matter) , layer (electronics) , thermogravimetry , chemical engineering , vapor pressure , optoelectronics , analytical chemistry (journal) , composite material , chemistry , optics , thermodynamics , laser , physics , oceanography , organic chemistry , engineering , chromatography , geology
The growth of GaN from the vapor phase is a promising technique for producing both bulk GaN crystals and GaN layers. For establishing a growth method from the vapor phase the source material and reactor setup are of great importance. Highly pure and self synthesized GaN powder was chosen as source material. The evaporation behaviour of the GaN powder was studied by means of thermogravimetry (TG). A vertical growth reactor was set up according to the results of numerical simulations of the temperature distributions and flow patterns. Freely nucleated GaN platelets of some millimetres in length were grown. Furthermore, thin GaN layers were deposited directly on a sapphire substrate. This nucleation layer was successfully overgrown by low pressure solution growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)