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Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals
Author(s) -
Kanagasekaran T.,
Mythili P.,
Srinivasan P.,
Vijayan N.,
Bhagavannarayana G.,
Kulriya P. K.,
Kanjilal D.,
Gopalakrishnan R.,
Ramasamy P.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711035
Subject(s) - irradiation , materials science , indentation hardness , dielectric , benzimidazole , ion , diffraction , indentation , optoelectronics , analytical chemistry (journal) , optics , chemistry , microstructure , composite material , physics , organic chemistry , chromatography , nuclear physics
The 50 MeV Si 7+ ion irradiation induced modifications on structural, dielectric, optical and mechanical properties of Vertical Bridgman grown benzimidazole (BMZ) crystals were studied. The high resolution X‐ray diffraction studies show the quality of as grown BMZ and irradiated BMZ crystals. The dielectric constant and dielectric loss as a function of frequency and temperature was studied in detail. The ion induced mechanical behaviour of both as grown BMZ and irradiated BMZ crystals has been explained with the indentation effects using Vickers microhardness tester. UV‐VIS. studies reveal the decrease in bandgap values and defects on irradiation. The above results are discussed in detail. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)