Premium
Observation of individual dislocations in 6H and 4H SiC by means of back‐reflection methods of X‐ray diffraction topography
Author(s) -
Wierzchowski W.,
Wieteska K.,
Balcer T.,
Malinowska A.,
Graeff W.,
Hofman W.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711032
Subject(s) - dislocation , monochromatic color , materials science , synchrotron , reflection (computer programming) , diffraction , bragg's law , diffraction topography , optics , beam (structure) , synchrotron radiation , crystal (programming language) , x ray , x ray crystallography , crystallography , core (optical fiber) , projection (relational algebra) , physics , chemistry , composite material , algorithm , computer science , programming language
SiC crystals of high structural perfection were investigated with several methods of X‐ray diffraction topography in Bragg‐case geometry. The methods included section and projection synchrotron white beam topography and monochromatic beam topography. The investigated 6H and 4H samples contained in large regions dislocations of density not exceeding 10 3 cm ‐2 . Most of them cannot be interpreted as hollow core dislocations (micro‐ or nano‐pipes). The concentration of the latter was lower than 10 2 cm ‐2 . The present investigation confirmed the possibility of revealing dislocations with all used methods. The quality of presently obtained Bragg‐case multi‐crystal and section images of dislocation enabled analysis based on comparison with numerically simulated images. The analysis confirmed the domination of screw‐type dislocations in the investigated crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)