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Physical properties of single crystalline CeNi 4.2 Mn 0.8
Author(s) -
Klimczak M.,
Talik E.,
Kusz J.,
Kowalczyk A.,
Toliński T.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711030
Subject(s) - materials science , crystallography , hexagonal crystal system , single crystal , electrical resistivity and conductivity , crystal structure , diffraction , condensed matter physics , analytical chemistry (journal) , chemistry , physics , chromatography , quantum mechanics , optics
A single crystal CeNi 4.2 Mn 0.8 was grown by the Czochralski method from a levitating melt. The structural, magnetic, electrical transport and electronic structure properties were examined. X‐ray diffraction confirms the hexagonal structure. The f occupancy n f and the coupling Δ between the f level and the conduction states are derived to be about 0.95 and 100 meV, respectively. The X‐ray photoemission spectroscopy shows that Ce ions in CeNi 4.2 Mn 0.8 are in the intermediate valance state. The temperature dependence of resistivity exhibits the metallic character of this compound and reveals a small inflection at 136 K. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)