Premium
Thick GaN layers on sapphire with various buffer layers
Author(s) -
Korbutowicz R.,
Dumiszewska E.,
Prażmowska J.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711021
Subject(s) - sapphire , metalorganic vapour phase epitaxy , epitaxy , materials science , substrate (aquarium) , optoelectronics , layer (electronics) , composite number , buffer (optical fiber) , chemical vapor deposition , composite material , optics , laser , telecommunications , oceanography , physics , computer science , geology
Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallographic structure and the quality of the epitaxial thick GaN layers were determined. Comparison of the three types of thick layers was performed. Significant differences were observed. It was found that thick GaN deposited on the simplest MOVPE‐GaN/sapphire composite substrate has comparable structure's properties as the other, more complicated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)