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Characterization of in‐plane structures of vapor deposited thin‐films of distyryl‐oligothiophenes by grazing incidence x‐ray diffractometry
Author(s) -
Yoshimoto Noriyuki,
Aosawa Keijyu,
Taniswa Toshinori,
Omote Kazuhiko,
Ackermann J.,
VidelotAckermann C.,
Brisset H.,
Fages F.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200711010
Subject(s) - substrate (aquarium) , materials science , crystallography , x ray , thin film , polymorphism (computer science) , chemistry , analytical chemistry (journal) , optics , nanotechnology , organic chemistry , physics , oceanography , geology , biochemistry , genotype , gene
The in‐plane structures of vapor deposited ultrathin films of distyryl‐oligothiophenes (DS‐2T) on SiO 2 substrate were characterized by grazing incidence x‐ray diffractometry (GIXD). Two polymorphs, low‐temperature and high‐temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)