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Depth‐profile analysis from X‐ray photoelectron spectroscopy on As‐implanted ZnO activated in ozone ambient
Author(s) -
Jeong T. S.,
Kim J. H.,
Bae S. J.,
Youn C. J.
Publication year - 2008
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200710984
Subject(s) - x ray photoelectron spectroscopy , binding energy , ozone , etching (microfabrication) , chemical bond , chemistry , spectroscopy , analytical chemistry (journal) , materials science , nanotechnology , chemical engineering , atomic physics , layer (electronics) , environmental chemistry , organic chemistry , physics , quantum mechanics , engineering
Chemical bonds of As‐implanted ZnO annealed in ozone molecular (O 3 ) ambient were analyzed through the x‐ray photoelectron spectroscopy as a function of the etching depth. With the etching depth increased to 25 nm from surface, the peaks of Zn2p and O1s core levels shifted toward the low‐binding energy, and the bonding formation of As 3d core level gradually varied from As 2 O 5 to As 2 O 3 . The new peaks were observed, which were posited to high‐binding energy of 4.4 eV from Zn2p and O1s core levels. Finally, the chemical bonds of As‐based oxides were found to consist of Zn(AsO 3 ) 2 , As 2 O 5 , and As 2 O 3 . (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)