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Anodic oxide films on silicon carbide
Author(s) -
Lilov S. K.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200710977
Subject(s) - silicon carbide , oxide , anode , electrolyte , materials science , carbide , chemical engineering , silicon , polar , inorganic chemistry , chemistry , metallurgy , electrode , physics , astronomy , engineering
Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar faces of SiC crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)