Premium
Bias field induced impedance relaxation of TlGaSe 2 semiconducting layered crystal at room temperature
Author(s) -
Okutan M.,
Azak F.,
Şahin P.,
Çavdarlı M.,
Erdem Z.,
Şentürk E.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200710964
Subject(s) - relaxation (psychology) , superposition principle , dielectric spectroscopy , crystal (programming language) , electrical impedance , condensed matter physics , dipole , chemistry , low frequency , cole–cole equation , absorption (acoustics) , biasing , nuclear magnetic resonance , materials science , molecular physics , voltage , optics , dielectric , electrode , physics , optoelectronics , psychology , social psychology , organic chemistry , quantum mechanics , astronomy , computer science , electrochemistry , programming language
Complex Impedance Spectroscopy has been employed for the study of absorption kinetics at TlGaSe 2 layered crystal under Bias voltage at room temperature. Two relaxations mechanisms have been observed. The crystal has “slow” and “fast” relaxation mechanisms in low and high frequency region, respectively. The complex impedance spectra were fitted by the superposition of two Cole‐Cole types of relaxations. The fast relaxation in the higher frequency region may be due to dipolar relaxation and the slow relaxation in the low frequency region may be due to Maxwell‐Wagner type relaxation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)