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Precise determination of residual stresses in FeSi3 electrical sheets in the vicinity of laser scratches with high lateral resolution
Author(s) -
Böhling M.,
Bauch J.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200710938
Subject(s) - residual stress , electron backscatter diffraction , laser , materials science , diffraction , scratch , optics , distortion (music) , crystal (programming language) , dislocation , composite material , optoelectronics , microstructure , amplifier , physics , cmos , computer science , programming language
States of residual stress in laser scribed FeSi3 electrical sheets in the vicinity of the laser scratch have been investigated. The influence of the laser treatment on the distortion of the crystal lattice was not only determined qualitatively but also quantitatively. Residual stresses of third kind were determined. Residual stress maps of the vicinity of the laser scratch were recorded showing clearly the influence of the laser treatment on the stress state as well as on the formation of the domain structure in FeSi3. The dislocation densities and stress states could be determined on spots of micrometer size. This was made possible by coupling the KOSSEL and electron backscatter diffraction (EBSD) techniques in one device at high lateral resolution. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)