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Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals
Author(s) -
Xu C. H.,
Zhang M. F.,
Meng S. H.,
Han J. C.,
Wang G. G.,
Zuo H. B.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200710902
Subject(s) - sapphire , crystal (programming language) , materials science , crystal growth , computation , temperature control , field (mathematics) , optics , analytical chemistry (journal) , mechanical engineering , crystallography , chemistry , computer science , physics , engineering , mathematics , algorithm , laser , pure mathematics , programming language , chromatography
In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro‐pulling and shoulder‐expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a‐axis crystallized direction, with 1.0‐5.0mm/h growth velocity and 10‐30K/h temperature decreasing speed, large sapphire single crystal (∅240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)