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Effect of crystal thickness of separate confinement heterostructure layers on 1.55‐μm loss‐coupled dfb laser characteristics
Author(s) -
Han JaeHo,
Park SungWoong
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610892
Subject(s) - heterojunction , laser , diode , grating , crystal (programming language) , materials science , optoelectronics , quantum dot , slope efficiency , layer (electronics) , laser diode , quantum well , quantum efficiency , optics , nanotechnology , physics , fiber laser , wavelength , computer science , programming language
We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550‐nm loss‐coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40‐nm to 80‐nm in both below and above the multi‐quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)