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Growth and crystal structure of the layered compound TlGaSe 2
Author(s) -
Delgado G. E.,
Mora A. J.,
Pérez F. V.,
González J.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610885
Subject(s) - monoclinic crystal system , crystallography , crystal structure , solid state , chemistry , diffraction , polyhedron , group (periodic table) , single crystal , materials science , physics , optics , combinatorics , mathematics , organic chemistry
The semiconducting compound TlGaSe 2 was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe 2 crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F 2 ) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe 8 and GaSe 4 polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)