Growth and crystal structure of the layered compound TlGaSe 2 | Zendy

Delgado G. E. | Zendy; Mora A. J. | Zendy; Pérez F. V. | Zendy; González J. | Zendy

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Growth and crystal structure of the layered compound TlGaSe 2

Author(s) -

Delgado G. E.,

Mora A. J.,

Pérez F. V.,

González J.

Publication year - 2007

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.200610885

Subject(s) - monoclinic crystal system , crystallography , crystal structure , solid state , chemistry , diffraction , polyhedron , group (periodic table) , single crystal , materials science , physics , optics , combinatorics , mathematics , organic chemistry

The semiconducting compound TlGaSe 2 was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe 2 crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F 2 ) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe 8 and GaSe 4 polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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