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Silicon crystal fibers: difficulties and progress
Author(s) -
Alshourbagy M.,
Toncelli A.,
Tonelli M.,
Marchetti F.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610881
Subject(s) - silicon , impurity , etching (microfabrication) , temperature gradient , materials science , crystal (programming language) , instability , work (physics) , crystal growth , nanotechnology , chemistry , optoelectronics , crystallography , mechanics , thermodynamics , computer science , physics , organic chemistry , meteorology , layer (electronics) , programming language
In this work difficulties and the progress in growing Silicon fibers by μ‐PD technique have been reported. Some main instability growth problems have been solved. Smooth temperature gradient is obtained for longer distance in and under the hot zone part by making an effective change in our hot zone. Also we obtained temperature stabilization as good as 0.2 K. The level of impurities was minimized by using etching and baking processes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)