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SiC crystal growth from transition metal silicide fluxes
Author(s) -
Yang Guangyi,
Wu Renbing,
Gao Mingxia,
Chen Jianjun,
Pan Yi
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610845
Subject(s) - materials science , dissolution , scanning electron microscope , silicide , crystal growth , precipitation , graphite , raman spectroscopy , crystal (programming language) , crystallography , chemical engineering , analytical chemistry (journal) , silicon , metallurgy , composite material , chemistry , optics , programming language , physics , chromatography , meteorology , computer science , engineering
SiC crystal growth in transition metal silicide melts was investigated by using spontaneous infiltration and solution methods. In the infiltration experiments, SiC powder preforms were infiltrated with Fe x Si y (Fe 3 Si, Fe 5 Si 3 and FeSi) and CoSi melts. The dissolution and precipitation of SiC led to SiC crystals growth in the infiltrated Fe 5 Si 3 and CoSi melts, SiC particles coalescing in FeSi and free carbon precipitation in Fe 3 Si. In the solution experiments, carbon from the graphite crucible dissolved in and reacted with FeSi 2 and Ti 2.3 Si 7.7 to form SiC crystals. Scanning electron microscopy (SEM), X‐ray diffraction (XRD) and Raman scattering spectrometer were employed to investigate SiC crystals growth. Based on the investigation, the effect of solution content on the SiC crystal growth, the growth mechanisms in both methods and prototypes of the SiC crystals are also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)