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Experimental study of bubble generation during β‐BaB 2 O 4 single crystal growth
Author(s) -
Pan X. H.,
Jin W. Q.,
Ai F.,
Liu Y.,
Hong Y.
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610785
Subject(s) - vicinal , bubble , nanometre , crystal (programming language) , evaporation , crystal growth , atomic force microscopy , crystallography , chemistry , materials science , optical microscope , chemical physics , nanotechnology , composite material , mechanics , thermodynamics , physics , scanning electron microscope , organic chemistry , computer science , programming language
The generation of bubble‐inclusions during BaB 2 O 4 (BBO) crystal growth from high temperature solution has been optically observed by an in situ observation technique. It was found that bubbles are formed from the peripheries of some hexagonal defects in the (0001) plane of the growing crystal, which may be caused by the evaporation of the air‐opened interface at the high temperature. In addition, atomic force microscope (AFM) was used to investigate the distribution of bubbles. Results revealed that the bubble generation and distribution depend strongly on the microscopic structure of the interface: on a rough interface, bubbles are easily formed and grow rapidly; however, they are greatly suppressed by step trains on a vicinal interface. In the latter case, the height value of a bubble is close to that of the step, which is in the order of several tens of nanometers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)