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Preparation of GaN crystals by heating a Li 3 N‐added Ga melt in Na vapor and their photoluminescence
Author(s) -
Yamada Takahiro,
Yamane Hisanori,
Ohta Takaaki,
Goto Takenari,
Yao Takafumi
Publication year - 2007
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610762
Subject(s) - photoluminescence , analytical chemistry (journal) , lithium (medication) , materials science , secondary ion mass spectrometry , ion , chemistry , optoelectronics , medicine , organic chemistry , chromatography , endocrinology
GaN crystals were prepared by heating a Ga melt with 1 at% Li 3 N against Ga at 750 °C in Na vapor under N 2 pressures of 0.4–1.0 MPa. The GaN crystals grown at 1.0 MPa of N 2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)