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Thermally stimulated current observation of trapping centers in an undoped Tl 4 Ga 3 InSe 8 layered single crystal
Author(s) -
Gasanly N. M.,
Mogaddam N. A. P.,
Ozkan H.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200610729
Subject(s) - trapping , single crystal , current (fluid) , atmospheric temperature range , range (aeronautics) , trap (plumbing) , crystal (programming language) , materials science , molecular physics , chemistry , atomic physics , condensed matter physics , crystallography , physics , thermodynamics , ecology , biology , meteorology , computer science , programming language , composite material
Thermally stimulated current measurements are carried out on as‐grown Tl 4 Ga 3 InSe 8 layered single crystal in the temperature range 10–160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl 4 Ga 3 InSe 8 . They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)