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Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering
Author(s) -
Du Wei,
Zong Fujian,
Ma Honglei,
Ma Jin,
Zhang Min,
Feng Xianjin,
Li Hua,
Zhang Zhigang,
Zhao Peng
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510689
Subject(s) - band gap , crystallite , materials science , sputter deposition , lattice constant , sputtering , analytical chemistry (journal) , diffraction , thin film , nitride , optoelectronics , fused quartz , cavity magnetron , quartz , optics , chemistry , nanotechnology , metallurgy , layer (electronics) , physics , chromatography
Abstract Polycrystalline Zn 3 N 2 films are prepared on Si and quartz glass substrates by RF magnetron sputtering at room temperature. The structural and optical properties are studied by X‐ray diffraction and double beam spectrophotometer, respectively. X‐ray diffraction indicates that the Zn 3 N 2 films deposited on Si and quartz glass substrates both have a preferred orientation in (321) and (442), also are cubic in structure with the lattice constant a=0.9847 and 0.9783 nm, respectively. The absorption coefficients as well as the film thickness are calculated from the transmission spectra, and their dependence on photon energy is examined to determine the optical band gap. Zn 3 N 2 is determined to be an indirect‐gap semiconductor with the band gap of 2.11(2) eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)