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Variable‐range hopping dc conduction in dysprosium oxide films grown on Si substrates
Author(s) -
Dakhel A. A.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510672
Subject(s) - dysprosium , variable range hopping , diffraction , oxide , materials science , condensed matter physics , atmospheric temperature range , thermal conduction , grain size , fermi level , analytical chemistry (journal) , chemistry , optics , inorganic chemistry , composite material , metallurgy , thermodynamics , physics , quantum mechanics , chromatography , electron
Thin dysprosium oxide films were prepared on p‐Si substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction. The dc electrical transport properties of the devices were studied in the temperature range (293‐400 K). The current‐temperature characteristics was analysed according to Mott's variable‐range hopping mechanism. The mechanism's parameters were calculated and compared with the results obtained by X‐ray diffraction. It was established that as the average grain size of air‐annealed films increases, the disorder degree parameter T 0 decreases and the density of states at Fermi level increases, which leads to decrease the average hopping distance. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)