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Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties
Author(s) -
Li Y. R.,
Yu C. J.,
Wu S. Y.,
Peng L.,
Imaishi N.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510642
Subject(s) - crucible (geodemography) , micro pulling down , crystal (programming language) , silicon , materials science , laminar flow , heat transfer , crystal growth , temperature gradient , monocrystalline silicon , melt flow index , torr , mechanics , thermodynamics , chemistry , composite material , crystallography , metallurgy , physics , computational chemistry , quantum mechanics , copolymer , computer science , programming language , polymer
Abstract In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski (Cz) furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnace (crucible diameter: 7.2 cm, crystal diameter: 3.5 cm, operated in a 10 Torr argon flow environment) was carried out using the finite‐element method. The global analysis assumed a pseudosteady axisymmetric state with laminar flow. The results show that different thermophysical properties will bring different variations of the heater power, the deflection of the melt/crystal interface, the axial temperature gradient in the crystal on the center of the melt/crystal interface and the average oxygen concentration along the melt/crystal interface. The application of the axial magnetic field is insensitive to this effect. This analysis reveals the importance of the determination of the thermophysical property in numerical simulation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)