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Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties
Author(s) -
Li Y. R.,
Yu C. J.,
Wu S. Y.,
Peng L.,
Imaishi N.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510642
Subject(s) - crucible (geodemography) , micro pulling down , crystal (programming language) , silicon , materials science , laminar flow , heat transfer , crystal growth , temperature gradient , monocrystalline silicon , melt flow index , torr , mechanics , thermodynamics , chemistry , composite material , crystallography , metallurgy , physics , computational chemistry , quantum mechanics , copolymer , computer science , programming language , polymer
In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski (Cz) furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnace (crucible diameter: 7.2 cm, crystal diameter: 3.5 cm, operated in a 10 Torr argon flow environment) was carried out using the finite‐element method. The global analysis assumed a pseudosteady axisymmetric state with laminar flow. The results show that different thermophysical properties will bring different variations of the heater power, the deflection of the melt/crystal interface, the axial temperature gradient in the crystal on the center of the melt/crystal interface and the average oxygen concentration along the melt/crystal interface. The application of the axial magnetic field is insensitive to this effect. This analysis reveals the importance of the determination of the thermophysical property in numerical simulation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)