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Thin overlayer influence on electrophysical properties of nickel films
Author(s) -
Hovorun T.,
Chornous A.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510605
Subject(s) - overlayer , temperature coefficient , materials science , grain boundary , nickel , mean free path , reflection coefficient , scattering , thin film , transmission coefficient , reflectivity , reflection (computer programming) , condensed matter physics , composite material , optics , metallurgy , transmission (telecommunications) , nanotechnology , microstructure , physics , electrical engineering , engineering , computer science , programming language
In this work it is experimentally investigated a size effect in temperature coefficient of resistance (TCR) of Ni films with Cu and SiO 2 thin overlayer. The parameters of electrical transfer (the mean‐free path of electron, the reflectivity coefficient of the external surfaces, the reflection and transmission coefficients at the grain boundary) were calculations. Decreasing of the value of the reflectivity coefficient is due to the change of the surface microrelief. It is show that the value of TCR decreases caused by the conditions of scattering changes on internal and external boundaries. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)