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Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals
Author(s) -
Karabulut O.,
Parlak M.,
Turan R.,
Serincan U.,
Akınoğlu B. G.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510568
Subject(s) - photocurrent , annealing (glass) , photoconductivity , materials science , ion implantation , ion , optoelectronics , excitation , band gap , molecular physics , analytical chemistry (journal) , chemistry , composite material , physics , organic chemistry , chromatography , quantum mechanics
The structure and temperature dependent spectral photoconductivity of as‐grown and N‐and Si‐implanted GaSe single crystals have been studied. It was observed that post‐annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo‐excitation intensity also support continuous distribution of localized states in the band gap. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim