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A novel growth method for ZnAl 2 O 4 single crystals
Author(s) -
Kumar K.,
Ramamoorthy K.,
Chandramohan R.,
Sankaranarayanan K.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510562
Subject(s) - ternary operation , materials science , diffractometer , oxide , single crystal , beryllium oxide , metal , coating , chemical engineering , reagent , crystal growth , foil method , ceramic , nanotechnology , crystallography , composite material , chemistry , metallurgy , scanning electron microscope , beryllium , organic chemistry , computer science , engineering , programming language
ZnAl 2 O 4 is a well‐known wide band gap compound semiconductor (E g =3.8eV), ceramic, opto‐mechanical, anti‐thermal coating in aero‐space vehicles and UV optoelectronic devices. A novel method for the growth of single crystals of a ternary oxide material was developed as a fruit of a long term work. Material to be grown as metal incorporated single crystal was taken as precursor and put into a bath containing acid as reaction speed up reagent (catalyst) as well as solvent with a metal foil as cation scavenger. Using this method, ZnAl 2 O 4 crystals having hexagonal facets are prepared from a single optimized bath. Structural and compositional properties of crystals were studied using Philips, Xpert ‐ MPD: X‐ray diffractometer and Philips, ESEM‐TMP + EDAX. Thus technique was found to be a new low cost and advantageous method for growth of single crystals of ternary oxide a material. We hope that these data be helpful either as a scientific or technical basis in material processing. Dedicated to Prof. P. Ramasamy © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim