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Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals
Author(s) -
Yildiz M.,
Dost S.,
Lent B.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510561
Subject(s) - diffusion , epitaxy , materials science , crystal growth , interface (matter) , silicon , germanium , phase (matter) , crystallography , liquid phase , chemical physics , chemical engineering , analytical chemistry (journal) , nanotechnology , optoelectronics , chemistry , thermodynamics , composite material , layer (electronics) , chromatography , physics , organic chemistry , capillary number , capillary action , engineering
The article presents a study for the evolution of growth interface in crystal growth by Liquid Phase Diffusion (LPD). Specific LPD experiments were designed to grow compositionally graded, germanium‐rich Si x Ge 1‐x single crystals of 25 mm in diameter with various thicknesses. Measured interface shapes show the evolution of the growth interface. Silicon compositions were measured by the Energy Dispersive X‐ray analysis (EDX) in the growth and radial directions. The study shows the feasibility of extracting the desired seeds of uniform composition from LPD grown crystals, for subsequent use in other epitaxial growth processes. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim