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Theoretical study of top illuminated planar SiC PIN ultraviolet detectors
Author(s) -
Wei Jiang
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510553
Subject(s) - planar , photodetector , photocurrent , wafer , ultraviolet , optoelectronics , bandwidth (computing) , fabrication , detector , dark current , materials science , optics , computer science , physics , telecommunications , medicine , computer graphics (images) , alternative medicine , pathology
It is the first time that the idea of planar PIN structure ultraviolet (UV) detection has been demonstrated on SiC EPI wafers. By using this structure, the surface illuminated device has no efficiency‐bandwidth trade‐off problem, also can be easily integrated as an array device which can solve the low signal issue in normal edge illuminated device due to small device area with no sacrificial of high bandwidth. The performance of SiC PIN photodetectors is analyzed based on a serial of process parameters and device structures. The calculated results show the correlations of dark current, photocurrent, bandwidth (BW) with PIN structures and fabrication processes. Speed and optoelectronics performances were carefully considered for real implementations under theoretical conditions. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)