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Electron‐phonon short‐range interactions mobility and p‐ to n‐type conversion in TlGaS 2 crystals
Author(s) -
Qasrawi A. F.,
Gasanly N. M.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510551
Subject(s) - hall effect , condensed matter physics , atmospheric temperature range , electrical resistivity and conductivity , electron mobility , thermal conduction , chemistry , phonon , electron , scattering , impurity , acceptor , coupling constant , coupling (piping) , materials science , physics , optics , thermodynamics , metallurgy , composite material , organic chemistry , quantum mechanics , particle physics
The conductivity type conversion from p ‐ to n ‐type at a critical temperature of 315 K in TlGaS 2 crystals is observed through the Hall effect measurements in the temperature range of 200–350 K. The analysis of the temperature‐dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36 m 0 and 0.23 m 0 , respectively. In addition, the temperature‐dependent Hall mobility is found to decrease with temperature following a logarithmic slope of ∼1.6. The Hall mobility in the n ‐region is limited by the electron‐phonon short‐range interactions scattering with an electron‐phonon coupling constant of 0.21. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)