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MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer
Author(s) -
Scholz S.,
Bauer J.,
Leibiger G.,
Herrnberger H.,
Hirsch D.,
Gottschalch V.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200510541
Subject(s) - metalorganic vapour phase epitaxy , layer (electronics) , atomic force microscopy , morphology (biology) , materials science , diffraction , buffer (optical fiber) , thin film , crystal (programming language) , chemistry , crystallography , analytical chemistry (journal) , epitaxy , nanotechnology , optics , telecommunications , physics , chromatography , biology , computer science , genetics , programming language
High quality GaAs layers have been grown by low pressure MOVPE on Ge(001) and Ge(001) 9° off oriented in [110] direction by using a thin low temperature (LT) GaAs layer. Investigations of the initial growth step were performed at different V/III ratios and temperatures. To show the good buffer layer quality solar cell structures were grown on off oriented n‐Ge(001) and n‐GaAs(001) substrates. The surface morphology was studied by atomic force microscopy which showed the step‐flow growth mode on 1.2 µm thick GaAs/Ge structures. The crystalline qualities of this structures and the smooth surface morphology were investigated by double crystal X‐ray diffraction (XRD) and atomic force microscopy (AFM). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)