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Electrical and optical properties of CdS nanocrystalline semiconductors
Author(s) -
Tiwari Shikha,
Tiwari Sanjay
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410534
Subject(s) - nanocrystalline material , semiconductor , nanoparticle , band gap , dielectric , conductivity , thiophenol , materials science , acceptor , analytical chemistry (journal) , electrical resistivity and conductivity , nanotechnology , chemistry , optoelectronics , condensed matter physics , organic chemistry , engineering , electrical engineering , physics
II‐VI semiconductor nanoparticles have recently attracted a lot of attention due to the possibility of their application in various devices. In the present study, chemical method has been used in synthesis of CdS nanoparticles and thiophenol was used as capping agent. X‐ray diffraction studies of both samples were done. The dc conductivity of CdS increases at a lower rate or is approximately constant upto 500K and thereafter the conductivity increases at a rapid rate. Beyond T c it is seen that the portion of the σ dc versus 1000/T is almost a straight line showing an Arrehenious behaviour. The dielectric constant of nanoparticles of CdS is found to be larger than the corresponding values of CdS crystals. It is clearly observed that at lower wavelengths nanocrystalline samples show a blue‐shift. The three peaks of sample (S2), A, Band C can be ascribed to the transition from Cd‐O complex donor formed by adsorbed oxygen to the valance band, Cd ‐ excess acceptor and the surface states, respectively. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)