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DC conduction processes in nickel‐dimethylglyoxime films
Author(s) -
Dakhel A. A.
Publication year - 2006
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410532
Subject(s) - dimethylglyoxime , amorphous solid , analytical chemistry (journal) , sublimation (psychology) , nickel , thermal conduction , chemistry , materials science , activation energy , metallurgy , crystallography , composite material , psychology , chromatography , psychotherapist
Thin nickel‐dimethylglyoxime Ni(DMG) 2 films of amorphous and crystalline structures were prepared by vacuum sublimation on glass and p‐type Si substrates. The films were characterised by X‐ray diffraction. The constructed Al/Ni(DMG) 2 /Si(p) MIS devices were characterised by the measurement of their capacitance as a function of gate voltage. The dc‐electrical conduction of the Ni(DMG) 2 films grown on silicon substrate were studied at room temperature and in a temperature range of 293 ‐ 323 K. The dc current‐voltage data of both amorphous and crystalline insulator follow the trap‐charge‐limited space‐charge‐limited conductivity mechanism with the characteristic trap energy E t of about 0.05 eV. The total concentration and the energy distribution of the traps were determined. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)