DC conduction processes in nickel‐dimethylglyoxime films

Thin nickel‐dimethylglyoxime Ni(DMG) 2 films of amorphous and crystalline structures were prepared by vacuum sublimation on glass and p‐type Si substrates. The films were characterised by X‐ray diffraction. The constructed Al/Ni(DMG) 2 /Si(p) MIS devices were characterised by the measurement of their capacitance as a function of gate voltage. The dc‐electrical conduction of the Ni(DMG) 2 films grown on silicon substrate were studied at room temperature and in a temperature range of 293 ‐ 323 K. The dc current‐voltage data of both amorphous and crystalline insulator follow the trap‐charge‐limited space‐charge‐limited conductivity mechanism with the characteristic trap energy E t of about 0.05 eV. The total concentration and the energy distribution of the traps were determined. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)