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Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals
Author(s) -
Porrini M.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410485
Subject(s) - antimony , vacancy defect , doping , silicon , materials science , crystallography , crystal (programming language) , analytical chemistry (journal) , mineralogy , chemistry , metallurgy , optoelectronics , chromatography , computer science , programming language
The impact of antimony doping on the formation of vacancy‐ and interstitial‐type microdefects in Czochralski silicon is studied by growing test crystals with different Sb doping levels, in the range from 0 (undoped) to 3 × 10 18 cm –3 , and with different pulling rates. Antimony is found to cause a shift from interstitial‐ to vacancy‐type microdefects, observable already at a concentration of ≈10 17 cm –3 . The shift coefficient K for antimony is estimated to be 7.2 × 10 –19 cm 3 . (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)